| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be easily and rapidly manufactured by reducing the processing time of forming a charge holding part and in which the characteristic of holding charges is improved, and to provide a method for manufacturing the same. SOLUTION: After a first HTO film 2a is formed on the upper surface of a silicon substrate 1 by a thermal CVD method, a silicon-rich HTO film 2b having a deep trap level is formed by the thermal CVD method under the condition of decelerating the flow rate of an N<SB>2</SB>O of process gas for forming this first HTO film 2a. An insulating film 2 is formed by forming a second HTO film by the thermal CVD method under the same condition as the first HTO film 2a on the upper surface of this silicon-rich HTO film 2b. COPYRIGHT: (C)2004,JPO&NCIPI
|
