| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing electrode of electrode-crosslinked molecular element by which an electrode structure containing a molecular-sized gap can be manufactured easily without using the electron beam lithography, and to provide an electrode-crosslinked molecular element having the electrode structure manufactured by the method. SOLUTION: After a resist pattern 12 having a prescribed horizontal width is formed on a substrate 11 by photolithography, and first electrode layers 14a and 14b are formed on the surface of the substrate 11 so that a gap 13 having a prescribed width may be formed between the layers 14a and 14b by vapor-depositing a conductive material on the surface of the substrate 11 obliquely to the surface at an angle ofθ1 (0°<θ1<90°), the resist pattern 12 is lifted off. Then the electrode structure having a gap G of 10-40 nm in width is realized by forming resist patterns 16a and 16b having slits 15 astride the gap 13, by again performing photolithography and vapor-depositing the conductive material on the surface of the substrate 11 obliquely to the surface at an angle ofθ2 (0°<θ2<θ1<90°) from the direction opposite to the direction of theθ1, and then, lifting off the resist patterns 16a and 16b. COPYRIGHT: (C)2004,JPO&NCIPI
|
