发明名称 |
HAFNIUM ALLOY TARGET AND PROCESS FOR PRODUCING THE SAME |
摘要 |
<p>A hafnium alloy target characterized in that either or both of Zr and Ti are contained in a total amount of 100 wt.ppm to 10 wt.% in I and Hf. The average crystal grain diameter thereof is in the range of 1 to 100 mum, and the content of each of impurities Fe, Cr and Ni therein is 1 wt.ppm or less. Further, with respect to the hafnium alloy target, the crystal habit face orientation factor of four planes consisting of {002} plane and, lying within 35° from this plane, {103}, {014} and {015} planes is 55% or greater, and the dispersion of total of four-plane intensity ratios depending on locations is 20% or less. The hafnium alloy target excels in film forming property and film forming rate, can reduce particle occurrence and is suitable for formation of a high dielectric gate insulating film such as HfO film or HfON film. Further, there is provided a process for producing the hafnium alloy target.</p> |
申请公布号 |
WO2004079039(A1) |
申请公布日期 |
2004.09.16 |
申请号 |
WO2004JP00448 |
申请日期 |
2004.01.21 |
申请人 |
NIKKO MATERIALS CO., LTD.;OKABE, TAKEO;IRUMATA, SHUICHI;YAMAKOSHI, YASUHIRO;MIYASHITA, HIROHITO;SUZUKI, RYO |
发明人 |
OKABE, TAKEO;IRUMATA, SHUICHI;YAMAKOSHI, YASUHIRO;MIYASHITA, HIROHITO;SUZUKI, RYO |
分类号 |
C23C14/34;H01L21/314;H01L21/316;(IPC1-7):C23C14/34;H01L21/336;H01L29/78 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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