发明名称 Herstellungsmethode von Halbleiterstrukturen mit Qantumquellenleitungen
摘要 In situ removal of selected or patterned portions of quantum well layers (22) is accomplished by photo-induced evaporation to form quantum wires (38), which may be in non-linear shapes, at the bases of at least one groove (14) in a semiconductor structure (10). <IMAGE>
申请公布号 DE69133388(T2) 申请公布日期 2004.09.16
申请号 DE1991633388T 申请日期 1991.06.25
申请人 XEROX CORP., ROCHESTER 发明人 PAOLI, THOMAS I.;EPLER, JOHN E.
分类号 H01L21/20;H01L21/205;H01L21/268;H01L29/06;H01L29/201;H01L29/80;H01S5/00;H01S5/34;(IPC1-7):H01L21/20 主分类号 H01L21/20
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