发明名称 |
Herstellungsmethode von Halbleiterstrukturen mit Qantumquellenleitungen |
摘要 |
In situ removal of selected or patterned portions of quantum well layers (22) is accomplished by photo-induced evaporation to form quantum wires (38), which may be in non-linear shapes, at the bases of at least one groove (14) in a semiconductor structure (10). <IMAGE> |
申请公布号 |
DE69133388(T2) |
申请公布日期 |
2004.09.16 |
申请号 |
DE1991633388T |
申请日期 |
1991.06.25 |
申请人 |
XEROX CORP., ROCHESTER |
发明人 |
PAOLI, THOMAS I.;EPLER, JOHN E. |
分类号 |
H01L21/20;H01L21/205;H01L21/268;H01L29/06;H01L29/201;H01L29/80;H01S5/00;H01S5/34;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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