III-V NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor light-emitting device comprising a III-V nitride compound semiconductor substrate, a semiconductor multilayer structure formed on the major surface of the substrate, a first electrode formed on the back surface of the substrate, and a second electrode formed on the semiconductor multilayer structure is disclosed. This semiconductor light-emitting device emits a light due to a current flowing between the first electrode and the second electrode. The radius of curvature which defines the amount of bending of the semiconductor light-emitting device is adjusted to be not less than 80 cm.