| 摘要 |
1,151,484. Coating with germanium. MOTOROLA Inc. April 9, 1968 [April 24, 1967], No. 17010/68. Heading C7F. A layer of monocrystalline Ge is formed on a Si substrate by first expitaxially growing a monocrystalline layer of Si from e.g. silicon tetrachloride, or SiH 4 on a monocrystalline silicon wafer, and then depositing Ge from a mixture of germane and a carrier gas e.g, helium, hydrogen or nitrogen, the temperature of the newly formed silicon being from 350 to 670‹ C., for a time sufficient to grow at least 0À2 microns of Ge, and then increasing the temperature to above 670‹ C. The further growth of Ge may be effected using germane, trichlorogermane or germanium tetrachloride. The reactions may take place in a quartz tube with R.F. induction coils Fig.1 (not shown). |
