| 发明名称 |
METHOD FOR FORMING SEMICONDUCTOR MATERIAL OF LOW-RESISTANCE-TYPE COMPOUNDS |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor material of a low-resistance p-type compound. <P>SOLUTION: The method is to form a semiconductor material of low-resistance p-type compounds on a substrate, and includes (a) a stage which forms a semiconductor material of p-type impurity-doped group III-V compounds on the substrate and (b) a stage which carries out a micro wave processing on the semiconductor material of the p-type impurity-doped group III-V compounds. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
| 申请公布号 |
JP2004260198(A) |
申请公布日期 |
2004.09.16 |
| 申请号 |
JP20040113510 |
申请日期 |
2004.04.07 |
| 申请人 |
KOKUREN KODEN KAGI KOFUN YUGENKOSHI |
发明人 |
SAI SORYO;CHO CHUEI |
| 分类号 |
H01L21/00;H01L21/20;H01L21/268;H01L21/324;H01L21/36;H01L33/12;H01L33/28;H01L33/32 |
主分类号 |
H01L21/00 |
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