发明名称 |
SEMICONDUCTOR CIRCUIT MODULE |
摘要 |
PROBLEM TO BE SOLVED: To improve circuit characteristic (wide range adjustment of gain, perfect flattening of gain and perfect elimination of distortion) by avoiding complication of circuit structure without confinement of specification when a varicap is used as a circuit element. SOLUTION: Constitution is performed in such a manner that the varicap diodes are contained in circuit elements at interstage between this stage FET and a prestage FET and circuit elements at interstage between this stage FET and a poststage FET. As a result, adjustment of each impedance of the interstages is performed by changing circuit constant of the circuit elements. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004260763(A) |
申请公布日期 |
2004.09.16 |
申请号 |
JP20030051936 |
申请日期 |
2003.02.27 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
MAEDA HIROTOSHI;HASHINAGA TATSUYA |
分类号 |
H03F1/32;H03F1/56;H03F3/193;(IPC1-7):H03F1/56 |
主分类号 |
H03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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