发明名称 SEMICONDUCTOR CIRCUIT MODULE
摘要 PROBLEM TO BE SOLVED: To improve circuit characteristic (wide range adjustment of gain, perfect flattening of gain and perfect elimination of distortion) by avoiding complication of circuit structure without confinement of specification when a varicap is used as a circuit element. SOLUTION: Constitution is performed in such a manner that the varicap diodes are contained in circuit elements at interstage between this stage FET and a prestage FET and circuit elements at interstage between this stage FET and a poststage FET. As a result, adjustment of each impedance of the interstages is performed by changing circuit constant of the circuit elements. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004260763(A) 申请公布日期 2004.09.16
申请号 JP20030051936 申请日期 2003.02.27
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MAEDA HIROTOSHI;HASHINAGA TATSUYA
分类号 H03F1/32;H03F1/56;H03F3/193;(IPC1-7):H03F1/56 主分类号 H03F1/32
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