| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the electric resistance between a cell capacitor and a connecting plug is reduced and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the semiconductor device includes the steps of forming metal thin layers on the inner wall of a capacitor hole and the inner wall of a contact hole, forming the lower part electrode of a polysilicon capacitor inscribed with the metal thin layer in the capacitor hole, and forming the connecting plug of the polysilicon inscribed with the metal thin layer in the contact hole. The contact of the polysilicon with the metal can be eliminated from between the lower part electrode of the polysilicon capacitor and the connecting plug, by continuously forming the lower part electrode of the polysilicon capacitor and the connecting plug with each other, and the electric resistance between the polysilicon and the metal can be reduced. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
