| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment method which can attain a mirror-like etched surface in the plasma treatment of a silicic substrate. <P>SOLUTION: The plasma treatment method is to carry out plasma treatment, the surface of a silicon wafer 7 to be treated, and a silicon wafer 7 whose circuit-forming surface is adhered with a protection tape 7a is mounted on a mounting portion 6 located in a treatment chamber of a plasma treatment apparatus in an attitude that the protection tape 7a contacts with the mounting portion 6. When generating plasma charge and etching the surface of the silicic substrate by supplying plasma generating gas containing fluorogas to the treatment chamber, the surface A of the silicon wafer 7 is kept at a temperature 40°C or above. Thereby, the deposition/ stack of a reaction product of the fluorogas on the etching surface is controlled to be etched uniformly, and the mirror-like etching surface can be attained. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
