| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of quickly changing the data protection state of a nonvolatile memory, and having a sufficient security strength. <P>SOLUTION: The data protection state of a nonvolatile memory is controlled by volatile protection state specifying sections VB0, VB1, VB2, VB3 to VBn. The initial states of the protection state specifying sections VB0, VB1, VB2, VB3 to VBn are decided by nonvolatile initial state storage sections NB0, NB1, NB2, NB3 to NBn. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
