| 摘要 |
PROBLEM TO BE SOLVED: To provide a dual gate MOSFET having a metal gate stack, and further a method for setting a threshold voltage in such a MOSFET. SOLUTION: A method includes a process of forming a gate oxide layer overlapped on the first and second channel regions; a process of forming a first metal layer, having a first thickness overlapped on the gate oxide layer; a process of forming a second metal layer, having a second thickness overlapped on the first metal layer having the first thickness; a process of selectively removing the second metal layer overlapped on the first channel region; a process of forming a third metal layer; a process for providing a first MOSFET, having a gate work function, according to the thickness of the first and third metal layers overlapped on the first-channel region; and a process of providing a second MOSFET complementary to the first MOSFET, having a gate work function according to the total of the thickness of the first, second, and third metal layers which overlap the second channel region. COPYRIGHT: (C)2004,JPO&NCIPI |
