| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxidation method of silicon using oxygen (<SP>1</SP>D). SOLUTION: A low temperature oxidation method of a silicon substrate includes a process to arrange a silicon wafer in a vacuum chamber, a process to keep the silicon wafer at a temperature between about 25°C to about 600°C, a process to lead N<SB>2</SB>O gas into the vacuum chamber, a process to dissociate the N<SB>2</SB>O gas to the oxygen (<SP>1</SP>D) using a xenon laser which emits light at a wavelength of about 172 nm and to flow the oxygen (<SP>1</SP>D) to the silicon wafer, and a process to form an oxide layer on at least a part of the silicon wafer. COPYRIGHT: (C)2004,JPO&NCIPI
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