| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device, of which the inside RAS width is controllable from the outside at the time of a test mode. SOLUTION: An inside signal RASE for instructing the activation of a word line is generated by an inside RAS generating circuit 52 in accordance with a control command received from the outside. By the inside RAS generating circuit 52, at this stage, the inside signal RASE is activated independently of the control command instructing the inactivation of the word line, at least in the period during an inside RAS guarantee signal RASLOCK received from an inside RAS guarantee signal generating circuit 56 is asserted. By the inside RAS guarantee signal generating circuit 56, the inside RAS guarantee signal RASLOCK is activated until the lapse of specified period to guarantee the restoring operation in a normal operation mode, and the inside RAS guarantee signal RASLOCK is inactivated in the test mode. COPYRIGHT: (C)2004,JPO&NCIPI
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