发明名称 |
Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body |
摘要 |
A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.
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申请公布号 |
US2004180491(A1) |
申请公布日期 |
2004.09.16 |
申请号 |
US20040796963 |
申请日期 |
2004.03.11 |
申请人 |
ARAI NOBUTOSHI;IWATA HIROSHI;KAKIMOTO SEIZO |
发明人 |
ARAI NOBUTOSHI;IWATA HIROSHI;KAKIMOTO SEIZO |
分类号 |
H01L21/265;H01L21/28;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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