发明名称 Boron doped diamond
摘要 A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 mum, or has a volume exceeding 1 mm<3>, or a combination of such characteristics.
申请公布号 US2004180205(A1) 申请公布日期 2004.09.16
申请号 US20030653419 申请日期 2003.09.03
申请人 发明人 SCARSBROOK GEOFFREY ALAN;MARTINEAU PHILIP MAURICE;TWITCHEN DANIEL JAMES;WHITEHEAD ANDREW JOHN;COOPER MICHAEL ANDREW;DORN BARBEL SUSANNE CHARLOTTE
分类号 C30B29/04;C23C16/27;C30B25/10;(IPC1-7):B32B9/00;C23C16/00 主分类号 C30B29/04
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