发明名称 |
SEMICONDUCTOR COMPONENT WITH A BIPOLAR LATERAL POWER TRANSISTOR |
摘要 |
A semiconductor component comprising at least one lateral bipolar power transistor which is composed of at least one group of single transistors with a common collector-, base- and emitter zone, which are parallel connected by three conductor track systems which bring together the emitter-, base- and collector currents of each of the single transistors; and each single transistor comprises an emitter region having an emitter-contact zone with an emitter contact, at least one active emitter zone and a connection zone between the contact zone and the active zone, a base region having a base-contact zone with a base contact and an internal base series resistor, and a collector region, said internal base series resistor being a structured semiconductor region comprising at least two ring segments, which is connected to the base contact zone and to the base contact. |
申请公布号 |
WO2004053989(A3) |
申请公布日期 |
2004.09.16 |
申请号 |
WO2003IB05860 |
申请日期 |
2003.12.08 |
申请人 |
PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH;KONINKLIJKE PHILIPS ELECTRONICS N.V.;NAETHE, AXEL;KORDTS, JUERGEN;BEIER, RALF |
发明人 |
NAETHE, AXEL;KORDTS, JUERGEN;BEIER, RALF |
分类号 |
H01L27/02;H01L29/06;H01L29/417;H01L29/423;H01L29/70;H01L29/73;H01L29/735 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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