| 摘要 |
PROBLEM TO BE SOLVED: To form a source-drain region by ion implantation (channeling injection) utilizing the channeling effect without forming a gate electrode sidewall film which becomes a part of a mask in the case of channeling injection when forming the source/drain region. SOLUTION: First source-drain regions (16n, 16p, 17n, 17p) are formed by applying ion implantation of a first conductivity impurity, in a self-matching manner, to a gate insulating film (14) and a gate electrode (15), which are formed on a semiconductor substrate (11). Afterwards, a sidewall film (19) is formed in the gate electrode. Second source-drain regions (21p, 21n) deeper than the first source-drain regions are formed, by implanting ions of the first conductivity impurity, in a self-aligned manner to the gate electrode with the sidewall film formed therein. At this time, the angle of ion implantation is within±3°with respect to the orientation of the semiconductor substrate, namely where a channeling phenomenon occurs. COPYRIGHT: (C)2004,JPO&NCIPI
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