发明名称 |
Manufacturing method for a semiconductor device with reduced local current |
摘要 |
A semiconductor device including: a first gate insulating film which is pattern-formed on an N type well region within a P type semiconductor substrate; a second gate insulating film which is formed on the semiconductor substrate except for this first gate insulating film; a gate electrode, which is formed in such a manner that this gate electrode is bridged over the first gate insulating film and the second gate insulating film; a P type body region which is formed in such a manner that this P type body region is located adjacent to the gate electrode; an N type source region and a channel region, which are formed within this P type body region; and an N type drain region which is formed at a position separated from the P type body region.
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申请公布号 |
US2004178459(A1) |
申请公布日期 |
2004.09.16 |
申请号 |
US20040809011 |
申请日期 |
2004.03.25 |
申请人 |
SANYO ELECTRIC CO., LTD., A OSAKA, JAPAN CORPORATION |
发明人 |
NISHIBE EIJI;KIKUCHI SHUICHI |
分类号 |
H01L29/423;H01L21/336;H01L29/08;H01L29/41;H01L29/78;(IPC1-7):H01L27/01 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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