RECESSED CHANNEL MOSFET AND FABRICATING METHOD THEREOF TO INSERT GATE METAL MATERIAL INTO RECESS TRENCH

摘要

PURPOSE: A recessed channel MOSFET and a fabricating method thereof are provided to perform easily a photo-etch process for forming a gate by inserting a gate metal material into a recess trench. CONSTITUTION: A gate insulating layer(135) and a gate polysilicon layer are formed along an inner wall formed within a substrate(100). A gate metal layer is surrounded by the gate polysilicon layer. The trench is buried by the gate metal layer. A gate stack(165) is formed with a capping layer on the gate metal layer. A spacer(170) is formed on a sidewall of the gate stack. A source/drain(180) is formed within the substrate. A top end of the gate polysilicon layer is projected from the surface of the substrate.