3 GROUP NITRIDE SEMICONDUCTOR LUMINOUS ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain high intensity luminescence of blue to green and to obtain luminescences of various kinds of colors by only a 3 group nitride semiconductor.

SOLUTION: A light emitting diode 500 is configured of a sapphire substrate 1; a buffer layer 2; a high carrier concentration n+ layer 3; an n-type layer 4 comprising Si doped Al0.3Ga0.7N; a luminous layer 5; a p-type layer 61 comprising Mg doped Al0.3Ga0.7N; a contact layer 62 comprising Mg doped GaN; an electrode 7 comprising Ni; and an electrode 8. The luminous layer 5 is a multiple quantum well structure formed by alternately laminating six layers of barrier layers 51 comprising Al0.25Ga0.75N having a thickness of about 100 Å and five layers of well layers 52 comprising Al0.2Ga0.8N having a thickness of about 100 Å. Zinc and silicon are added to the well layer 52 each with a concentration of 5 x 1018/cm3. The luminous layer 5 emitting such ultra-violet light and a phosphor layer 208 which receives the ultra-violet light radiated by the luminous layer 5 and converts the ultra-violet light to visible light are formed on the electrode 7.

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