| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element which can suppress or prevent the oxidation of a light emitting layer and a current diffusion layer even if an oxide transparent conductive film is formed on the light emitting layer or the current diffusion layer formed of a compound semiconductor including an Al, and to provide a method for manufacturing the same. <P>SOLUTION: The light emitting element 12 includes the light emitting layer 9 formed of an AlGaInP mixed crystal compound semiconductor, and the oxide transparent conductive film 10 formed on the light emitting layer 9 and made of an indium tin oxide (ITO). A first part 5 brought into contact with the light emitting layer 9 of this oxide transparent conductive film 10 is made of an amorphous material, and a second part 6 disposed on the first part 5 is made of a crystalline material. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
