| 摘要 |
PROBLEM TO BE SOLVED: To suppress the deterioration of the image quality of images picked up by means of a threshold-modulated solid-state image pickup element due to the occurrence of blooming. SOLUTION: A photodiode and an insulated-gate field effect transistor contained in the unit pixel of the solid-state image pickup element share a first-conductivity well region formed in a second-conductivity semiconductor layer provided on a first-conductivity semiconductor substrate. An underlying area which is a partial area of the semiconductor layer from the boundary with the well region to the boundary with the semiconductor substrate underlying the well region is contained in the area of the well region excluding the underlying area and is formed so that its potential may become lower as compared with an inter-pixel area of the semiconductor layer from the surface of the semiconductor layer to the boundary with the semiconductor substrate sandwiched between the well regions of adjacent unit pixels. However, the first conductivity is p-type or n-type and the second conductivity is the other type. COPYRIGHT: (C)2004,JPO&NCIPI
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