| 摘要 |
PROBLEM TO BE SOLVED: To manufacture semiconductor devices or the like at a high yield while maintaining reproducibility within a substrate such as a semiconductor wafer or the like and among the substrates. SOLUTION: The method to be provided comprises a step of making a pretreatment for plating on the substrate prior to selectively forming a protective film on the bottom face and the side faces or on the exposed surface of an buried interconnect formed on the surface of the substrate, a step of selectively forming the protective film on the bottom face and the side faces, or on the exposed surface of the interconnect by carrying out electroless plating on the surface of the pretreated substrate, a step of making a post-treatment for enhancing the selectivity on the protective film as needed, and a step of drying the substrate. COPYRIGHT: (C)2004,JPO&NCIPI |
