| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank and a halftone phase shift mask which can improve the processing accuracy of the pattern width dimension or the like by selecting the material to form the halftone film, and to provide a method for transferring the pattern. <P>SOLUTION: The halftone phase shift mask has a single layer film consisting of a semitransparent light shielding film layer or a multilayer film consisting of a transparent film layer and a light shielding film layer on a transparent substrate. The semitransparent light shielding film layer or the transparent film layer and the light shielding film layer of the halftone phase shift mask blank comprise metals, silicon, oxygen and/or nitrogen and have≥80 atomic % silicon content and≥300°C boiling point of halides produced from the metals at atmospheric pressure. The halftone phase shift mask is obtained from the above blank, and a pattern is formed by exposing and transferring in lithographic processes using the above mask. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
