| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor structure in a semiconductor element. SOLUTION: The capacitor structure comprises a first power rail 112, disposed at the highest level of the semiconductor element and a second power rail 108, disposed at the highest level of the semiconductor element. The capacitor structure further comprises a dielectrics layer 106 disposed at least on the upper side of a part of the first power rail 112 or the second power rail 108. The capacitor structure further comprises a conductive layer 104, disposed both on the upper side and between the first power rail 112 and the second power rail 108. The conductive layer 104 is in electrical contact with the power rail which does not contain dielectrics layers and is disposed on the upper side of the dielectrics layer. COPYRIGHT: (C)2004,JPO&NCIPI
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