| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus capable of depositing a sputter film of excellent step coverage in a contact hole of high aspect ratio without degrading productivity, life time of a target, yield of a product, and reliability. SOLUTION: The sputtering apparatus 1 has a stage 4 in which a wafer 3 as a work to be treated is placed on one end side in a vacuum chamber 2, and first and second targets 5a and 5b formed of Al are provided on a side facing the stage 4, and first and second target holders 6a and 6b to generate plasma by applying high voltage thereto are provided on a back side of the stage. The first target 5a has a disk shape of substantially same diameter as the diameter of the wafer 3, and is disposed at the position so that the distance X from the wafer 3 is 200-300 mm. The second target 5b has a hollow disk shape larger than the wafer 3, and is disposed at the position so that the distance Y from the wafer 3 is 50-100 mm. COPYRIGHT: (C)2004,JPO&NCIPI
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