METHOD OF MANUFACTURING SOLID STATE IMAGING ELEMENT

摘要

PROBLEM TO BE SOLVED: To control an increase in shutter voltage by securing a sensor accumulation area by preventing the diffusion of p-type impurity for suppressing smear and blooming to the sensor area in the manufacturing of a solid-state imaging element. SOLUTION: The method of manufacturing a CCD type solid-state imaging element comprises steps of forming a p-type impurity layer 12 by first ion implantation to a semiconductor substrate 1 through a first ion implantation aperture 22 of a first ion implantation mask 21; and forming an n-type impurity layer 13 by second ion implantation to the semiconductor substrate 1 through a second ion implantation aperture 32 which is wider than the first ion implantation aperture 22 of a second ion implantation mask 31. Moreover, the second ion implantation aperture 32 is formed wider than the first ion implantation aperture 21 so that the size of the p-type impurity layer 12 in the direction of the semiconductor substrate after heat treatment after the second ion implantation becomes identical to the size of the n-type impurity layer 13 in the direction of the semiconductor substrate after the heat treatment following the second ion implantation. COPYRIGHT: (C)2004,JPO&NCIPI