发明名称 FIELD EFFECT TRANSISTOR AND IMAGE DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a field effect transistor which is useable as a new semiconductor switching element for providing a basic technique of a flexible display and which facilitates a manufacturing process at a low cost. SOLUTION: The field effect transistor has the structure that a gate electrode and a semiconductor layer disposed adjacent to each other are sandwiched between a source electrode and a drain electrode. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004259763(A) 申请公布日期 2004.09.16
申请号 JP20030046167 申请日期 2003.02.24
申请人 SHARP CORP 发明人 MORI SHIGEYASU;INOUE ATSUHISA;AKAMATSU KEIICHI
分类号 H01L51/50;H01L29/786;H01L51/00;H01L51/05;H05B33/14;(IPC1-7):H01L29/786 主分类号 H01L51/50
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