发明名称 |
System, method and apparatus for improved local dual-damascene planarization |
摘要 |
A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed on the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.
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申请公布号 |
US2004180545(A1) |
申请公布日期 |
2004.09.16 |
申请号 |
US20030390520 |
申请日期 |
2003.03.14 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
LOHOKARE SHRIKANT P.;BAILEY ANDREW D.;HEMKER DAVID;COOK JOEL M. |
分类号 |
H01L21/3105;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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