发明名称 System, method and apparatus for improved local dual-damascene planarization
摘要 A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed on the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.
申请公布号 US2004180545(A1) 申请公布日期 2004.09.16
申请号 US20030390520 申请日期 2003.03.14
申请人 LAM RESEARCH CORPORATION 发明人 LOHOKARE SHRIKANT P.;BAILEY ANDREW D.;HEMKER DAVID;COOK JOEL M.
分类号 H01L21/3105;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/302 主分类号 H01L21/3105
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