| 摘要 |
The present invention discloses a method for manufacturing semiconductor device wherein a channel implant process of a transistor in a DRAM is performed in a self-aligned manner without using any mask. In accordance with the method, a device isolation film defining an active region on a semiconductor substrate. The device isolation film extrudes upward higher than the active region. The active region is subjected to a tilt ion implant process for implanting a impurity into the active region from two directions using the device isolation film as a mask so that a impurity concentration of the active region adjacent to the device isolation film is one half of that of the active region between the active region adjacent to the device isolation film. A stacked structure of a gate oxide film and a gate electrode are formed on the active region to complete the formation process of the semiconductor device.
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