DEFECT-FREE THIN AND PLANAR FILM PROCESSING

摘要

The process of the present invention forms copper interconnects in a semiconductor wafer surface. During the process, initially, narrow (322) and large (326) features are provided in the top surface of the wafer, and then a primary copper layer (334A) is deposited by employing an electrochemical deposition process. The primary copper layer completely fills the features and forms a planar surface over the narrow feature and a non-planar surface over the large feature. By employing an electrochemical mechanical deposition process, a secondary copper layer (334B) is deposited onto the primary copper layer to form a planar copper layer over the narrow and large features. After this process step, the thickness of the planar copper layer is reduced using an electropolishing process.