发明名称 Semiconductor device
摘要 A semiconductor device and a manufacturing method thereof are provided with downsizing and densification achieved by reducing the thickness of the semiconductor device without increase in area. Terminal electrodes are arranged, in plan view, outside a region where semiconductor chips are arranged. A lower semiconductor chip is placed to overlap in the range of height with the terminal electrodes, an upper semiconductor chip is placed above the lower semiconductor chip, a wire connects the upper and lower semiconductor chips to the terminal electrodes, and an encapsulating resin encapsulates the upper and lower semiconductor chips and wire. The encapsulating resin has its bottom surface coplanar with the bottom surface of the terminal electrodes.
申请公布号 US2004178490(A1) 申请公布日期 2004.09.16
申请号 US20040810813 申请日期 2004.03.29
申请人 RENESAS TECHNOLOGY CORP. 发明人 ABE SHUNICHI;UEBAYASHI TETSUYA;IZUMI NAOKI;YAMAZAKI AKIRA
分类号 H01L25/18;H01L23/495;H01L23/50;H01L25/065;H01L25/07;(IPC1-7):H01L21/44;H01L23/48 主分类号 H01L25/18
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