NAND FLASH MEMORY AVOIDING PROGRAM DISTURB WITH A SELF BOOSTING TECHNIQUE
摘要
<p>A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the NAND string during the programming process. One exemplar implementation includes applying a voltage (e.g. Vdd) to the source contact and turning on the source side select transistor for the NAND sting corresponding to the cell being inhibited. Another implementation includes applying a pre-charging voltage to the unselected word lines of the NAND string corresponding to the cell being inhibited prior to applying the program voltage.</p>
申请公布号
WO2004079747(A1)
申请公布日期
2004.09.16
申请号
WO2004US03290
申请日期
2004.02.05
申请人
SANDISK CORPORATION;HIGASHITANI, MASAAKI;LUTZE, JEFFREY, W.;CHEN, JIAN;LI, YAN