METHOD OF FORMING TRENCH ISOLATION STRUCTURE

摘要

A method of forming a trench isolation structure wherein there is no void or crack in the trench interior. In particular, a method of forming a trench isolation structure, comprising forming trenches on a surface of silicon substrate, applying a polysilazane solution, effecting prebaking at prebake temperature controlled so as to rise with the passage of time within the range of 50 to 400°C and thereafter sequentially carrying out hardening at temperature not lower than the maximum prebake temperature, polishing and etching. The prebaking is performed either stepwise at two or more stages of temperatures or while conducting a monotone temperature increase.