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发明名称
DOPPEL-GATE-MOSFET-TRANSISTOR UND VERFAHREN ZU SEINER HERSTELLUNG
摘要
申请公布号
DE50007390(D1)
申请公布日期
2004.09.16
申请号
DE20005007390
申请日期
2000.05.26
申请人
INFINEON TECHNOLOGIES AG
发明人
ROESNER, WOLFGANG;SCHULZ, THOMAS;RISCH, LOTHAR
分类号
H01L21/336;H01L29/786;(IPC1-7):H01L29/786
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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