METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO IMPROVE RELIABILITY OF GATE INTERCONNECTION

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve reliability of a gate interconnection by forming a micro gate electrode with good precision. CONSTITUTION: A gate insulation layer(2) is formed on a substrate(1). An electrode formation layer constituting a gate electrode is formed on the gate insulation layer. A silicon nitride layer(7) is formed on the electrode formation layer. A mask layer is formed on the silicon nitride layer. A resist pattern(9) is formed on the mask layer. The mask layer is patterned by using the resist pattern as a mask. A dry etching process using the patterned mask layer as a mask is performed to pattern the silicon nitride layer and the electrode formation layer. The mask layer is eliminated by a CMP(chemical mechanical polishing) process using the silicon nitride layer as a stopper layer.