发明名称 SOFTWARE ERROR-AVOIDABLE MEMORY CELL AND SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To positively avoid a software error caused by radial rays without degrading access performance by inserting an error correction circuit. <P>SOLUTION: A memory cell has: a capacitor A14 connected, through a transistor A11, to a bit line D941; a capacitor B15 connected, through a transistor B12, to the bit line D941; and a capacitor C16, connected, through a transistor C13, to a bit line E942. The on/off of the transistors, A11, B12, and C13 is controlled through a common word line. Consequently, the capacitor A14 has a capacity smaller than that of the capacitor C16, the capacitor B15 has a capacity smaller than that of the capacitor C16, and the sum of the capacities of the capacitors A14 and B15 is made larger than the capacity of the capacitor C16. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004259371(A) 申请公布日期 2004.09.16
申请号 JP20030049127 申请日期 2003.02.26
申请人 NEC CORP 发明人 IMAI KAZUYUKI
分类号 H01L27/108;G11C11/404;H01L21/8242 主分类号 H01L27/108
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