| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device wherein data are prevented from varying owing to the accumulation of disturbance while suppressing the increase of the number of rewriting times of a sector. <P>SOLUTION: A refresh zone detection part 22 divides the block of a semiconductor memory into units to refresh, sets each of them to be a refresh zone, and detects which refresh zone the sector of a writing object is included in. Whenever writing to the sector occurs, a refresh carrying out 23 sequentially refreshes the sector included in the refresh zone detected by the refresh zone detection part 22. Consequently, the increase of the number of rewriting times to a specific sector is prevented, and the data is prevented from varying owing to the accumulation of disturb by refresh. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
