发明名称 DEVICE AND METHOD FOR PROCESSING SUBSTRATE, MANUFACTURING METHOD OF THE SUBSTRATE, AND DEVICE AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing device, capable of fundamentally eliminating the electrostatic fault or the like by a simple method, a substrate processing method and a manufacturing method of a substrate, using the processing method, and a manufacturing device of a liquid crystal device, using the manufacturing method and a manufacturing method of the liquid crystal device. SOLUTION: A substrate processing device 1 has a means for removing moisture in the processing chamber. Consequently, the dielectric constant increase and residual absorbing force becoming large by the adhesion of the moisture are prevented, and the releasing property of a substrate 2 from an electrostatic chuck 19 deteriorates rapidly, without the adhesion of the moisture on a mating surface of the electrostatic chuck 19 and the substrate 2, when the electrostatic chuck 19 provided on a mounting stand 14 is used. Moreover, the surface potential discharging on a treatment side surface of the substrate 2 and an element being damaged is prevented, by remarkedly increasing the surface potential at removal from the electrostatic chuck 19 of the substrate 2. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004260142(A) 申请公布日期 2004.09.16
申请号 JP20040013207 申请日期 2004.01.21
申请人 SEIKO EPSON CORP 发明人 ARAFUKA HIDEKI;MASUDA KENJI
分类号 H01L21/683;H01L21/205;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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