| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device utilizing a metal silicate film which can reduce leak current of an insulation film, and also to provide an easy method of manufacturing the same semiconductor device. SOLUTION: The semiconductor device comprises a silicon substrate 10; the first layer region of a gate insulating film 12' including silicon, nitrogen, and metal element formed on the silicon substrate 10 and in contact therewith; a second layer region provided in the side opposed to the first layer region of the gate insulating film 12'; a third layer region provided between the first and second layer regions; a gate insulating film wherein the maximum concentration of metal in the third layer region is higher than the minimum value of concentration of metal in the first and second layer regions, and the maximum concentration of nitrogen in the third layer region is higher than the minimum value of concentration of nitrogen in the first and second layer region; a gate electrode which is in contact with the second layer region; and a pair of source and drain regions formed in both sides of the gate insulating film. COPYRIGHT: (C)2004,JPO&NCIPI
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