METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO VARY THICKNESS OF LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to shorten process time and to simplify process step by varying the thickness of a forming layer. CONSTITUTION: An etch target layer(21), a hard mask insulating layer(23), an OBARC(Organic Bottom Anti-Reflective Coating) layer(27) and a chemical amplified resist pattern(29) are sequentially formed on a semiconductor substrate. The OBARC layer is etched using the chemical amplified resist pattern as a mask. Then, the hard mask insulating layer and the etch target layer are etched using the OBARC pattern as a mask. At the time, the thickness ratio of the OBARC layer and the chemical amplified resist layer is 1.0-1.5 : 1.