发明名称 METHOD FOR MONITORING ANNEALING PROCESS BY MEASURING THERMAL WAVE VALUE OF PRE-ANNEALING PROCESS AND THERMAL WAVE VALUE OF POST-ANNEALING PROCESS
摘要 PURPOSE: A method for monitoring an annealing process is provided to monitor an annealing process by measuring a thermal wave value of a pre-annealing process and a thermal wave value of a post-annealing process and applying the thermal wave values to reference data. CONSTITUTION: A thermal wave value of a pre-annealing process is measured from a semiconductor substrate(110). An annealing process is performed on the semiconductor substrate(120). A thermal wave value of a post-annealing process is measured from the semiconductor substrate(130). The thermal wave value of the pre-annealing process and the thermal wave value of the post-annealing process are compared with reference data(140).
申请公布号 KR20040079511(A) 申请公布日期 2004.09.16
申请号 KR20030014388 申请日期 2003.03.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, HYEON MIN;PARK, BYEONG HO
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址