发明名称 |
METHOD FOR MONITORING ANNEALING PROCESS BY MEASURING THERMAL WAVE VALUE OF PRE-ANNEALING PROCESS AND THERMAL WAVE VALUE OF POST-ANNEALING PROCESS |
摘要 |
PURPOSE: A method for monitoring an annealing process is provided to monitor an annealing process by measuring a thermal wave value of a pre-annealing process and a thermal wave value of a post-annealing process and applying the thermal wave values to reference data. CONSTITUTION: A thermal wave value of a pre-annealing process is measured from a semiconductor substrate(110). An annealing process is performed on the semiconductor substrate(120). A thermal wave value of a post-annealing process is measured from the semiconductor substrate(130). The thermal wave value of the pre-annealing process and the thermal wave value of the post-annealing process are compared with reference data(140).
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申请公布号 |
KR20040079511(A) |
申请公布日期 |
2004.09.16 |
申请号 |
KR20030014388 |
申请日期 |
2003.03.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, HYEON MIN;PARK, BYEONG HO |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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