| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming an conductor film uniformly in grooves without deteriorating the performance of elements formed in the device even when there exist the grooves with a high aspect ratio. SOLUTION: A semiconductor substrate 1 is equipped with an interlayer insulating film 2 where recesses (grooves) 3 are provided, a solution 5 containing Ru (ruthenium) elements as a solute is applied on the semiconductor substrate 1, and thereafter, the semiconductor substrate 1 where the solution 5 is applied is subjected to a drying process in a reducing atmosphere. COPYRIGHT: (C)2004,JPO&NCIPI
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