| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is improved in operational reliability by preventing the inside of a porous dielectric film from being contaminated and, at the same time, reducing a desorbed gas and can operate at a high speed; and to provide a method of manufacturing the device. SOLUTION: This semiconductor device comprises first wiring 38 formed in a first interlayer insulating film 35 and connected to a contact plug 33, the porous dielectric film 40 formed on the insulating film 35, and a via hole 42 formed through the dielectric film 40 to expose the top surface of the first wiring 38. This device also comprises a via plug 45 formed by packing a conductive material in the via hole 42, second wiring 49 formed in a second interlayer insulating film 46 formed on the dielectric film 40, and so on. In this semiconductor device, a first sealing layer 41 is formed by packing an insulating material in pores in the vicinity of the upper surface of the dielectric film 40, and a second sealing layer 43 is formed by packing a conductive material in the porous dielectric film 40 on the side wall of the via hole 42. COPYRIGHT: (C)2004,JPO&NCIPI
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