发明名称 Semiconductor structure and method of making same
摘要 A semiconductor structure includes a substrate having a surface and being made of a material that provides a typical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides a typical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The a typical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.
申请公布号 US2004178448(A1) 申请公布日期 2004.09.16
申请号 US20040777721 申请日期 2004.02.11
申请人 RAYSSAC OLIVIER;MARITNEZ MURIEL;BISSON SEPHORAH;PORTIGLIATTI LIONEL 发明人 RAYSSAC OLIVIER;MARITNEZ MURIEL;BISSON SEPHORAH;PORTIGLIATTI LIONEL
分类号 H01L21/762;(IPC1-7):H01L27/01 主分类号 H01L21/762
代理机构 代理人
主权项
地址