| 摘要 |
PURPOSE: A semiconductor device having a capacitor-under-bitline structure and a fabricating method thereof are provided to reduce the manufacturing cost by minimizing the number of lithography processes in comparison with a standard logic process. CONSTITUTION: A plurality of gate lines are formed on the first and the second regions of a semiconductor substrate(100). An insulating layer(112) is formed with a plurality of storage node contact holes(114a), a plurality of bit line contact holes(114b), gate lines of the second region, and metal contact holes(114c). A plurality of conductive plugs are formed within the storage node contact holes, the bit line contact holes, and the metal contact holes. The first metal lines(122) are formed on the insulating layer of the second region. A plurality of capacitors(132) are formed on the insulating layer of the first region. The first interlayer dielectric(120,124) is formed on the capacitor, the first metal line, and the insulating layer. The second metal lines(138b,138c) are formed on the first interlayer dielectric of the second region.
|
