| 摘要 |
<p>The present invention may improve the reliability of a semiconductor device and method of manufacture thereof, a semiconductor wafer, a circuit board, and an electronic instrument. A resin layer (20) is formed on a semiconductor substrate (10) in which a plurality of integrated circuits (12) are formed. In the surface of the resin layer (20), a plurality of recesses (22) are formed. On the resin layer (20), an interconnecting line (40) is formed to pass along any of the recesses (22). The semiconductor substrate (10) is cut into a plurality of semiconductor chips. Each recess (22) is formed to have an opening width less than the thickness of the interconnecting line (40), and a depth of at least 1 µ m.</p> |
