发明名称 |
Low temperature processing of PCMO thin film on an Iridium layer for RRAM application |
摘要 |
A method of applying a PCMO thin film on an iridium substrate for use in a RRAM device, includes preparing a substrate; depositing a barrier layer on the substrate; depositing a layer of iridium on the barrier layer; spin coating a layer of PCMO on the layer of iridium; baking the layer of PCMO and substrate in a three-step baking process; post-bake annealing the substrate and the layer of PCMO in a RTP chamber; repeating said spin coating, baking and annealing steps until the layer of PCMO has a desired thickness; annealing the substrate and the layer of PCMO; depositing a top electrode; and completing the RRAM device. |
申请公布号 |
EP1458026(A2) |
申请公布日期 |
2004.09.15 |
申请号 |
EP20040250772 |
申请日期 |
2004.02.12 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
ZHANG, FENGYAN;ZHUANG, WEIWEI;PAN, WEI;HSU, SHENG TENG |
分类号 |
H01L27/108;G11C13/00;H01L45/00;(IPC1-7):H01L27/10 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|