| 发明名称 |
CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same |
| 摘要 |
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| 申请公布号 |
GB2365214(B) |
申请公布日期 |
2004.09.15 |
| 申请号 |
GB20010000209 |
申请日期 |
2001.01.04 |
| 申请人 |
* SAMSUNG ELECTRONICS COMPANY LIMITED |
发明人 |
GEUM-JONG * BAE;TAE-HEE * CHOE;SANG-SU * KIM;HWA-SUNG * RHEE;NAE-IN * LEE;KYUNG-WOOK * LEE |
| 分类号 |
H01L21/335;H01L21/02;H01L21/336;H01L21/337;H01L21/762;H01L27/12;H01L29/10;H01L29/786;H01L29/80;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/335 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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